|
本校於2013年2月19日獲得美國第US 8,377,320 B2號專利，專利名稱為「製作底切蝕刻微結構的製程方法 (METHOD OF FORMING AN UNDERCUT MICROSTRUCTURE)」
內容：
- 專利國別：美國
- 公告日：2013年2月19日
- 專利類型：發明
- 專利號：US 8,377,320 B2
- 專利名稱：製作底切蝕刻微結構的製程方法 (METHOD OF FORMING AN UNDERCUT MICROSTRUCTURE)
- 摘要：A method of forming an undercut microstructure includes: forming an etch mask on a top surface of a substrate; forming, on a top surface of the etch mask, an ion implantation mask having a top surface that is smaller than the top surface of the etch mask and that does not extend beyond the top surface of the etch mask; ion implanting the substrate in the presence of the etch mask and the ion implantation mask so that a damaged region is generated at a depth below an area of the surface that is not masked by the ion implantation mask; and etching the surface of the substrate until the damaged region is removed.
- 發明人：王子建、鄒岳勳
- 本校教師發明人介紹：
|
