本校於2013年2月19日獲得美國第US 8,377,320 B2號專利，專利名稱為「製作底切蝕刻微結構的製程方法 (METHOD OF FORMING AN UNDERCUT MICROSTRUCTURE)」

內容：

1. 專利國別：美國
2. 公告日：2013年2月19日
3. 專利類型：發明
4. 專利號：US 8,377,320 B2
5. 專利名稱：製作底切蝕刻微結構的製程方法 (METHOD OF FORMING AN UNDERCUT MICROSTRUCTURE)
6. 摘要：A method of forming an undercut microstructure includes: forming an etch mask on a top surface of a substrate; forming, on a top surface of the etch mask, an ion implantation mask having a top surface that is smaller than the top surface of the etch mask and that does not extend beyond the top surface of the etch mask; ion implanting the substrate in the presence of the etch mask and the ion implantation mask so that a damaged region is generated at a depth below an area of the surface that is not masked by the ion implantation mask; and etching the surface of the substrate until the damaged region is removed.
7. 發明人：王子建、鄒岳勳
8. 本校教師發明人介紹：